(Hong Kong)
Product Summary
The BLF278 is a VHF push-pull power MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Parametrics
Absolute maximum ratings: (1)VDS, drain-source voltage: 125 V max; (2)VGS, gate-source voltage: ±20 V max; (3)ID, drain current (DC): 18 A max; (4)Ptot, total power dissipation: 500 W max at Tmb ≤ 25 ℃; total device; both sections equally loaded; (5)Tstg, storage temperature: -65 +150 ℃; (6)Tj, junction temperature: - 200 ℃ max.
Features
Features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BLF278 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF278,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 250W VHF |
Data Sheet |
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BLF278/01,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS |
Data Sheet |
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